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MMBTSB815
PNP Silicon Epitaxial Planar Transistor
for general purpose AF amplifier
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS
Value 20 15 5 700 1.5 200 150 - 55 to + 150
Unit V V V mA A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 2 V, -IC = 50 mA at -VCE = 2 V, -IC = 500 mA Collector Cutoff Current at -VCB = 15 V Emitter Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 10 A Collector Emitter Breakdown Voltage at -IC = 100 A Emitter Base Breakdown Voltage at -IE = 10 A Collector Emitter Saturation Voltage at -IC = 5 mA, -IB = 0.5 mA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Transition Frequency at -VCE = 10 V, -IC = 50 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VCE(sat) fT Cob Min. 200 80 20 15 5 Typ. 250 13 Max. 400 100 100 35 120 Unit nA nA V V V mV mV MHz pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 18/07/2007
MMBTSB815
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 18/07/2007

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